GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

Authors

  • Didik Aryanto Department, Faculty of Mathematics and Natural Science Education IKIP PGRI Semarang, Lontar, 50125 Semarang, Indonesia
  • Zulkafli Othaman Quantum Structure Research Group, Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai, 81310 Johor, Malaysia
  • Abd. Khamim Ismail Quantum Structure Research Group, Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai, 81310 Johor, Malaysia

DOI:

https://doi.org/10.26740/jpfa.v2n1.p1-6

Keywords:

Quantum Dots, In0.5Ga0.5As, MOCVD, AFM, Photoluminescen

Abstract

Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers. Surface study using atomic force microscopy (AFM) shows that surface morphology of the self-assembled QDs change with different number of stacking QDs layers caused by the previous QDs layers and the thickness of the GaAs spacer layers. PL measurement shows variation in the PL spectra as a function of number of stacking layers of In0.5Ga0.5As QDs. The PL peak positions blue-shifted from 1225 nm to 1095 nm and dramatically increase in intensity with increasing number of stacking QDs layers.

References

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Published

2012-06-14

How to Cite

Aryanto, D., Othaman, Z. and Ismail, A. K. (2012) “GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS”, Jurnal Penelitian Fisika dan Aplikasinya (JPFA), 2(1), pp. 1–6. doi: 10.26740/jpfa.v2n1.p1-6.

Issue

Vol. 2 No. 1 (2012)

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